| PART |
Description |
Maker |
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| HI1-565AJD-5 HI1-565AKD-5 HI1-565ASD_883 HI1-565AS |
From old datasheet system
High Speed Monolithic D/A Converter with Reference
High Speed, Monolithic D/A Converter with Reference
CIRCUIT BREAKER
High Speed/ Monolithic D/A Converter with Reference
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
|
INTERSIL[Intersil Corporation]
|
| TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| NCP105006 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ON Semiconductor
|
| LT3511 LT3575 LT3573 LT3574 LT3956 LT3957 |
Monolithic High Voltage Isolated Flyback Converter No External Start-Up Resistor
|
Linear Technology
|
| IXBH15N160 |
(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
